Siliup SP60P03GHTO

Siliup · FETs & Power MOSFETs · MPN SP60P03GHTO

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Specifications

Gate Charge(Qg)82nC@10V
Configuration-
Drain to Source Voltage60V
Output Capacitance(Coss)1.517nF
Current - Continuous Drain(Id)220A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation184W
RDS(on)3.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)110pF
Number1 P-Channel
Input Capacitance(Ciss)8.364nF

Technical details

P-Channel 60V 220A 184W Surface Mount TOLL-8L

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