Siliup · FETs & Power MOSFETs · MPN SP60P03GHTD
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| Gate Charge(Qg) | 82nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.06nF |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 178W |
| RDS(on) | 3.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 78pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.67nF |
P-Channel 60V 200A 178W Surface Mount TO-263