Siliup · FETs & Power MOSFETs · MPN SP60N55T2
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| Gate Charge(Qg) | 8.6nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 90pF |
| Current - Continuous Drain(Id) | 3.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 1.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 55mΩ@10V;70mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 330pF |
60V 3.5A 1.2W Surface Mount SOT-23