Siliup SP60N30TH

Siliup · FETs & Power MOSFETs · MPN SP60N30TH

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)30mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.18nF

Technical details

60V 25A 40W Surface Mount TO-252

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