Siliup SP60N30T1

Siliup · FETs & Power MOSFETs · MPN SP60N30T1

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Specifications

Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)12nC@10V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)64pF
RDS(on)30mΩ@10V;35mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)590pF

Technical details

N-Channel 60V 4.5A 2.5W Surface Mount SOT-23-3L

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