Siliup SP60N30NQ

Siliup · FETs & Power MOSFETs · MPN SP60N30NQ

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Specifications

Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)14nC@10V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)30mΩ@10V;35mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.18nF

Technical details

60V 9A 2.1W Surface Mount PDFN-6L(2x2)

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