Siliup SP60N1K5KDTW

Siliup · FETs & Power MOSFETs · MPN SP60N1K5KDTW

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Specifications

Gate Charge(Qg)1.34nC@15V
Drain to Source Voltage60V
Output Capacitance(Coss)6pF
Current - Continuous Drain(Id)220mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation320mW
RDS(on)1.5Ω@10V
Reverse Transfer Capacitance (Crss@Vds)2.5pF
Number2 N-Channel
Input Capacitance(Ciss)12pF

Technical details

60V 220mA 320mW Surface Mount SOT-363

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