Siliup · FETs & Power MOSFETs · MPN SP60N1K1T2
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| Drain to Source Voltage | 60V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 1.4nC@4.5V |
| Output Capacitance(Coss) | 25pF |
| Current - Continuous Drain(Id) | 300mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 225mW |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 1.1Ω@10V |
| Number | - |
| Input Capacitance(Ciss) | 50pF |
60V 300mA 225mW Surface Mount SOT-23