Siliup SP60N13TQ

Siliup · FETs & Power MOSFETs · MPN SP60N13TQ

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Specifications

Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)39nC@10V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)116pF
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.403nF

Technical details

N-Channel 60V 55A 70W Through Hole TO-220-3L-C

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