Siliup SP60N13GDP8

Siliup · FETs & Power MOSFETs · MPN SP60N13GDP8

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Specifications

Gate Charge(Qg)15.9nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)235pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation3.5W
RDS(on)13.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)10pF
Number2 N-Channel
Input Capacitance(Ciss)940pF
TypeN-Channel

Technical details

N-Channel 60V 10A 3.5W Surface Mount SOP-8L

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