Siliup SP60N12GTH

Siliup · FETs & Power MOSFETs · MPN SP60N12GTH

No reviews yet — be the first to review Siliup SP60N12GTH.

Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)235pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)12mΩ@10V;15mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)940pF
TypeN-Channel

Technical details

N-Channel 60V 30A 55W Surface Mount TO-252

Related FETs & Power MOSFETs