Siliup · FETs & Power MOSFETs · MPN SP60N10GDP8
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 27.9nC@10V |
| Output Capacitance(Coss) | 310pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 2W |
| RDS(on) | 10mΩ@10V;13mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.35nF |
| Type | N-Channel |
N-Channel 60V 12A 2W Surface Mount SOP-8L