Siliup SP60N10GDNK

Siliup · FETs & Power MOSFETs · MPN SP60N10GDNK

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)27.9nC@10V
Output Capacitance(Coss)310pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation55W
RDS(on)10mΩ@10V;13mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number2 N-Channel
Input Capacitance(Ciss)1.35nF

Technical details

60V 35A 55W Surface Mount PDFN-8L(5x6)

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