Siliup SP60N08TH

Siliup · FETs & Power MOSFETs · MPN SP60N08TH

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Specifications

Gate Charge(Qg)37nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)70A
Output Capacitance(Coss)290pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)14mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4nF
TypeN-Channel

Technical details

N-Channel 60V 70A 85W Surface Mount TO-252

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