Siliup SP60N08GTH

Siliup · FETs & Power MOSFETs · MPN SP60N08GTH

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)27.9nC@10V
Output Capacitance(Coss)310pF
Current - Continuous Drain(Id)68A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation81W
RDS(on)7.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-channel
Input Capacitance(Ciss)1.35nF

Technical details

60V 68A 81W Surface Mount TO-252

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