Siliup SP60N08GNJ

Siliup · FETs & Power MOSFETs · MPN SP60N08GNJ

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Specifications

Gate Charge(Qg)27.9nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)310pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)7.5mΩ@10V;10mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.35nF

Technical details

60V 40A 40W Surface Mount PDFN-8L(3x3)

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