Siliup SP60N05GTH

Siliup · FETs & Power MOSFETs · MPN SP60N05GTH

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)37.5nC@10V
Output Capacitance(Coss)660pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation78W
RDS(on)4.8mΩ@10V;5.5mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)19pF
Number1 N-channel
Input Capacitance(Ciss)2.304nF
TypeN-Channel

Technical details

N-Channel 60V 90A 78W Surface Mount TO-252

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