Siliup SP60N05GTD

Siliup · FETs & Power MOSFETs · MPN SP60N05GTD

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)37.5nC@10V
Output Capacitance(Coss)660pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation95W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)4.5mΩ@10V;5.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.304nF

Technical details

60V 100A 95W Surface Mount TO-263-3L

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