Siliup SP60N05GNJ

Siliup · FETs & Power MOSFETs · MPN SP60N05GNJ

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Specifications

Gate Charge(Qg)37.5nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)660pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)4.7mΩ@10V;5.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.304nF
TypeN-Channel

Technical details

N-Channel 60V 50A 45W Surface Mount PDFN-8L(3x3)

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