Siliup SP60N03HTD

Siliup · FETs & Power MOSFETs · MPN SP60N03HTD

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Specifications

Gate Charge(Qg)154nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)710pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation220W
Reverse Transfer Capacitance (Crss@Vds)540pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.1nF
TypeN-Channel

Technical details

N-Channel 60V 130A 220W Surface Mount TO-263

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