Siliup SP60N03GTH

Siliup · FETs & Power MOSFETs · MPN SP60N03GTH

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Specifications

Gate Charge(Qg)42nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)975pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)3.7mΩ@10V;4.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.25nF

Technical details

60V 110A 110W Surface Mount TO-252

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