Siliup · FETs & Power MOSFETs · MPN SP60N02BGTH
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| Gate Charge(Qg) | 101nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 2.201nF |
| Current - Continuous Drain(Id) | 140A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 136pF |
| RDS(on) | 2.8mΩ@10V;3.2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.441nF |
60V 140A 115W Surface Mount TO-252