Siliup · FETs & Power MOSFETs · MPN SP60N02BGTD
No reviews yet — be the first to review Siliup SP60N02BGTD.
| Gate Charge(Qg) | 101nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.3nF |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 170W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 2.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.91nF |
60V 180A 170W Surface Mount TO-263