Siliup · FETs & Power MOSFETs · MPN SP60N01GHTO
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| Output Capacitance(Coss) | 2.714nF |
|---|---|
| Pd - Power Dissipation | 475W |
| Gate Charge(Qg) | 91nC |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Reverse Transfer Capacitance (Crss@Vds) | 151pF |
| RDS(on) | 1.05mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.43nF |
475W 60V 2.8V 1.05mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS