Siliup · FETs & Power MOSFETs · MPN SP60N01BGTQ
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 148nC@10V |
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 220W |
| RDS(on) | 1.5mΩ@10V;2mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.904nF |
60V 200A 220W Through Hole TO-220-3L