Siliup SP60N01BGMT

Siliup · FETs & Power MOSFETs · MPN SP60N01BGMT

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)138nC@10V
Current - Continuous Drain(Id)340A
Output Capacitance(Coss)2.17nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation360W
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)1.15mΩ@10V;1.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)7.82nF

Technical details

60V 340A 1.7V 360W 1 N-channel STOLL-8L Single FETs, MOSFETs RoHS

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