Siliup SP60N01BGHTO

Siliup · FETs & Power MOSFETs · MPN SP60N01BGHTO

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Specifications

Gate Charge(Qg)105nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)3.885nF
Current - Continuous Drain(Id)330A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation355W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)1.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.397nF

Technical details

60V 330A 355W Surface Mount TOLL-8L

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