Siliup · FETs & Power MOSFETs · MPN SP60N01BGHTD
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 105nC@0V |
| Output Capacitance(Coss) | 3.885nF |
| Current - Continuous Drain(Id) | 330A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 213W |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| RDS(on) | 2.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.397nF |
N-Channel 60V 330A 213W Surface Mount TO-263