Siliup · FETs & Power MOSFETs · MPN SP60N01BGHNK
No reviews yet — be the first to review Siliup SP60N01BGHNK.
| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 104.8nC@10V |
| Output Capacitance(Coss) | 1.398nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 124W |
| RDS(on) | 1.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 58pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.97nF |
60V 120A 3V 124W 1.6mΩ@10V 1 N-channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS