Siliup SP6036CP8

Siliup · FETs & Power MOSFETs · MPN SP6036CP8

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Specifications

Gate Charge(Qg)22nC@10V;25.7nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)53pF;77pF
Current - Continuous Drain(Id)5A;4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V;1.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)46pF;58pF
RDS(on)35mΩ@10V;68mΩ@10V
Number-
Input Capacitance(Ciss)1.165nF;1.09nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 60V 5A 2W Surface Mount SOP-8

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