Siliup SP6026CTM

Siliup · FETs & Power MOSFETs · MPN SP6026CTM

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)20nC@10V;23nC@10V
Current - Continuous Drain(Id)20A;18A
Output Capacitance(Coss)53pF;77pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V;1.5V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)46pF;58pF
Input Capacitance(Ciss)1.165nF;1.09nF
TypeN-Channel + P-Channel

Technical details

60V 40W N-Channel + P-Channel TO-252-4L Single FETs, MOSFETs RoHS

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