Siliup SP6023CTM

Siliup · FETs & Power MOSFETs · MPN SP6023CTM

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)42nC@4.5V;46.5nC@10V
Output Capacitance(Coss)120pF;179pF
Current - Continuous Drain(Id)20A;35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V;1.7V
Pd - Power Dissipation48W
RDS(on)23mΩ@10V;30mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)106pF;120pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.64nF;2.417nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 60V 35A 48W Surface Mount TO-252-4L

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