Siliup SP6012BCTM

Siliup · FETs & Power MOSFETs · MPN SP6012BCTM

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Specifications

Output Capacitance(Coss)130pF;110pF
Pd - Power Dissipation65W
Configuration-
Drain to Source Voltage60V
Gate Charge(Qg)39nC@10V;63nC@10V
Current - Continuous Drain(Id)35A;45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
RDS(on)15mΩ@10V;22mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)116pF;106pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)2.403nF;2.588nF

Technical details

N-Channel+P-Channel 60V 45A 65W Surface Mount TO-252-4L

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