Siliup SP52N120CTF

Siliup · FETs & Power MOSFETs · MPN SP52N120CTF

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Specifications

Gate Charge(Qg)139nC
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)52A
Output Capacitance(Coss)142pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation357W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)32mΩ@18V
Number1 N-channel
Input Capacitance(Ciss)3.177nF
TypeN-Channel

Technical details

N-Channel 1.2kV 52A 357W Through Hole TO-247

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