Siliup SP50P20TF

Siliup · FETs & Power MOSFETs · MPN SP50P20TF

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Specifications

Gate Charge(Qg)104nC@10V
Configuration-
Drain to Source Voltage200V
Output Capacitance(Coss)1.021nF
Current - Continuous Drain(Id)27A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation453W
RDS(on)70mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)163pF
Number1 P-Channel
Input Capacitance(Ciss)5.421nF

Technical details

200V 27A 453W Through Hole TO-247

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