Siliup SP50N20TF

Siliup · FETs & Power MOSFETs · MPN SP50N20TF

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Specifications

Gate Charge(Qg)66nC@10V
Configuration-
Drain to Source Voltage200V
Output Capacitance(Coss)750pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation300W
RDS(on)33mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)76pF
Number-
Input Capacitance(Ciss)4.85nF

Technical details

200V 50A 300W Through Hole TO-247

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