Siliup SP50MF65TF

Siliup · FETs & Power MOSFETs · MPN SP50MF65TF

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Specifications

Gate Charge(Qg)81nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)64pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation198W
RDS(on)40mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)45pF
Number1 N-channel
Input Capacitance(Ciss)4.24nF
TypeN-Channel

Technical details

650V 50A 4V 198W 40mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS

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