Siliup · FETs & Power MOSFETs · MPN SP4N100TQ
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 55nC@10V |
| Drain to Source Voltage | 1kV |
| Output Capacitance(Coss) | 123pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 146W |
| RDS(on) | 2.2Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.124nF |
1kV 4A 146W Through Hole TO-220-3L-C