Siliup SP4435BP8

Siliup · FETs & Power MOSFETs · MPN SP4435BP8

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Specifications

Gate Charge(Qg)24.2nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)158pF
RDS(on)14mΩ@10V;20mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.223nF

Technical details

P-Channel 30V 9A 3.1W Surface Mount SOP-8L

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