Siliup SP40P04AGHNK

Siliup · FETs & Power MOSFETs · MPN SP40P04AGHNK

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)90nC@10V
Output Capacitance(Coss)1.686nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
RDS(on)4.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)39pF
Number1 P-Channel
Input Capacitance(Ciss)6.55nF
TypeP-Channel

Technical details

P-Channel 40V 120A 150W Surface Mount PDFN5x6-8

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