Siliup SP40N20TQ

Siliup · FETs & Power MOSFETs · MPN SP40N20TQ

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Specifications

Gate Charge(Qg)45nC@10V
Configuration-
Drain to Source Voltage200V
Output Capacitance(Coss)383pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation230W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)54mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.58nF

Technical details

N-Channel 200V 40A 230W Through Hole TO-220-3L-C

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