Siliup SP40N04TQ

Siliup · FETs & Power MOSFETs · MPN SP40N04TQ

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Specifications

Gate Charge(Qg)71nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)285pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)256pF
RDS(on)4.1mΩ@10V;5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.785nF

Technical details

N-Channel 40V 100A 90W Through Hole TO-220

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