Siliup SP40N02GTH

Siliup · FETs & Power MOSFETs · MPN SP40N02GTH

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Specifications

Gate Charge(Qg)54nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.88nF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.2nF
TypeN-Channel

Technical details

N-Channel 40V 130A 110W Surface Mount TO-252

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