Siliup SP40N02BGTD

Siliup · FETs & Power MOSFETs · MPN SP40N02BGTD

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Specifications

Gate Charge(Qg)57nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.208nF
Current - Continuous Drain(Id)145A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation175W
Reverse Transfer Capacitance (Crss@Vds)59pF
RDS(on)3.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.485nF
TypeN-Channel

Technical details

N-Channel 40V 145A 175W Surface Mount TO-263

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