Siliup SP40N02ATD

Siliup · FETs & Power MOSFETs · MPN SP40N02ATD

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Specifications

Output Capacitance(Coss)1.94nF
Pd - Power Dissipation246W
Drain to Source Voltage40V
Configuration-
Gate Charge(Qg)147nC@10V
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Reverse Transfer Capacitance (Crss@Vds)760pF
RDS(on)1.6mΩ@10V;2.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)10.8nF

Technical details

N-Channel 40V 180A 246W Surface Mount TO-263

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