Siliup · FETs & Power MOSFETs · MPN SP40N02AGNK
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| Drain to Source Voltage | 40V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 57nC@10V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.208nF |
| RDS(on) | 3.2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.485nF |
40V 200A 2.5V 120W 3.2mΩ@4.5V 1 N-channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS