Siliup · FETs & Power MOSFETs · MPN SP40N01HTQ
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| Gate Charge(Qg) | 138nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 309W |
| RDS(on) | 1.9mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
40V 200A 3V 309W 1.9mΩ@10V 1 N-channel N-Channel TO-220-3L Single FETs, MOSFETs RoHS