Siliup SP40N01GTO

Siliup · FETs & Power MOSFETs · MPN SP40N01GTO

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Specifications

Output Capacitance(Coss)1.85nF
Pd - Power Dissipation300W
Configuration-
Gate Charge(Qg)128nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)230A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)1mΩ@10V;1.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.5nF

Technical details

N-Channel 40V 230A 300W Surface Mount TOLL-8L

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