Siliup SP40N01GHNK

Siliup · FETs & Power MOSFETs · MPN SP40N01GHNK

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Specifications

Gate Charge(Qg)126nC@20V
Drain to Source Voltage40V
Output Capacitance(Coss)1.95nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)69pF
RDS(on)1.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.75nF
TypeN-Channel

Technical details

MOSFET N-Channel 40V 120A 130W Surface Mount PDFN-8L(5x6)

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