Siliup SP40N01BHTQ

Siliup · FETs & Power MOSFETs · MPN SP40N01BHTQ

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Specifications

Gate Charge(Qg)247nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.328nF
Current - Continuous Drain(Id)230A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation350W
Reverse Transfer Capacitance (Crss@Vds)1.259nF
RDS(on)1.5mΩ@10V
Number-
Input Capacitance(Ciss)11.685nF
TypeN-Channel

Technical details

N-Channel 40V 230A 350W Through Hole TO-220-3L-C

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